Briefly: Micron said users could expect about a 40 percent reduction in power consumption compared to previous generations of 8Gb DDR4-based products, making them an attractive choice for artificial intelligence, 5G , autonomous vehicles, mobile devices, network infrastructure, graphics and gaming applications.
Micron this week began mass production of 16 Gb DDR4 products in the 1Z nanometer manufacturing process.
Announcing progress, Micron said its 16Gb DDR4 ndr DDR4 product provided “much higher bit density” as well as improved performance and lower costs compared to the previous generation 1Y nm node.
1X, 1Y, and 1Z are standard nomenclatures in the memory industry, each designating a 10nm, 2nd generation, and 3rd class process. As Guru3D emphasized, “1X can mean 19 to 17nm, 1Y can mean 16 to 14nm, and 1Z for 13 to 10nm.”
Scott DeBoer, Executive Vice President of Technology Development for Micron Technology, said, “The development and mass production of the smallest feature size DRAM node in the industry is a testament to Micron’s world-class engineering and manufacturing capabilities. especially when the DRAM scale is becoming very complex. “
The memory maker also announced that it is now shipping low-power 4X 16Gb dual-power data rate (LPDDR4X) DRAM volumes in UFS-based multi-chip packet (UMCP4) for mobile device manufacturers looking for smaller packets with lower power requirements to increase battery life.
Samsung announced in March that DDR4 1Z-nm 8Gb will go into mass production in the second half of this year to accommodate high-end PCs and corporate servers slated for launch in 2020.
Masthead credit: Nor Gal memory module